50T65FD1 IGBT Transistor

🔹 50T65FD1 IGBT Transistor – 650V 50A, N-Channel, Field Stop IV

The 50T65FD1 is a 650V, 50A N-channel Field Stop IV IGBT designed for high-frequency power switching applications. It features low conduction and switching losses, along with an integrated fast recovery diode, making it ideal for induction heating, UPS, SMPS, and PFC circuits .

✅ Specifications:

Collector-Emitter Voltage (VCE): 650V

Collector Current (IC): 50A @ 100°C, 100A @ 25°C

Saturation Voltage (VCE(sat)): 2.2V (typ) @ 50A, 25°C; 2.4V (typ) @ 50A, 125°C

Gate-Emitter Voltage (VGE): ±20V

Power Dissipation (PD): 235W

Total Gate Charge (Qg): 145nC (typ) @ 400V, 50A, 15V

Switching Loss (Eon/Eoff): 2.8mJ / 1.0mJ (typ) @ 400V, 50A, 15V

Input Capacitance (Cies): 4532pF (typ) @ 30V

Package: TO-3P / TO-247 / TO-247S / TO-3PN variants

📦 Features:
✔️ Field Stop IV technology for low conduction loss
✔️ Fast switching for high-frequency operation
✔️ Built-in fast recovery diode (FRD)
✔️ High input impedance
✔️ Suitable for induction heating, UPS, SMPS, PFC
✔️ Various through-hole packages: TO-3P, TO-247, TO-247S, TO-3PN

📦 Applications:
✔️ Induction heating systems
✔️ Uninterruptible power supplies (UPS)
✔️ Switching mode power supplies (SMPS)
✔️ Power factor correction (PFC) circuits
✔️ Motor drives and inverters
✔️ Welding equipment