PNP Silicon Epitaxial Planar TransistorFor high voltage applications.The transistor is subdivided into two groups, G and Laccording to its DC current gain.On special request, these transistors can bemanufactured in different pin configurations.

Type Designator: A1268

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 175 °C

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: –

Package: TO92