FQP27P06 P Channel Mosfet

Type Designator: FQP27P06
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ – Maximum Power Dissipation: 120 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ – Maximum Drain Current: 27 A
Tjⓘ – Maximum Junction Temperature: 175 °C
Qgⓘ – Total Gate Charge: 33 nC
Rdsⓘ – Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: TO220