8N60 M0SFET

46.00

Drain-Source Voltage (Vdss): 600V

Continuous Drain Current (Id): 8A (Tc=25°C) to 7.5A (depending on conditions)

On-Resistance (RDS(on)): ≤1.25Ω @ VGS=10V

Gate Threshold Voltage (VGS(th)): 2V – 4V

Availability: Only 1 left in stock

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🔹 8N60 N-Channel Power MOSFET – P8N60SE / WGP8N60SE, TO-220 Package

The 8N60 is a high-voltage N‑Channel power MOSFET designed for efficient power switching applications such as switched‑mode power supplies (SMPS), power factor correction (PFC) circuits, and DC‑DC converters. The “P8N60SE” and “WGP8N60SE” model variants share identical core specifications, making them suitable replacements for each other.

✅ Specifications:

Drain-Source Voltage (Vdss): 600V

Continuous Drain Current (Id): 8A (Tc=25°C) to 7.5A (depending on conditions)

On-Resistance (RDS(on)): ≤1.25Ω @ VGS=10V

Gate Threshold Voltage (VGS(th)): 2V – 4V

Total Gate Charge (Qg): 29nC @ VGS=10V

Power Dissipation (Pd): 50W – 52W

Input Capacitance (Ciss): 1000pF

Package: TO-220 (through-hole)

📦 Features:
✔️ Low on‑resistance (≤1.25Ω) for high efficiency in power applications
✔️ Fast switching speed and avalanche energy specified for reliable operation
✔️ Standard TO‑220 package for easy heatsink mounting
✔️ Wide common‑source applications – suitable for 600V rails

📦 Applications:
✔️ High‑efficiency SMPS and power factor correction (PFC) circuits
✔️ DC‑DC converters and offline power supplies
✔️ Motor control and power switching systems
✔️ General‑purpose high‑voltage switching

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8N60 M0SFET8N60 M0SFET
46.00

Availability: Only 1 left in stock