2pcs IRF540N MOSFET

🔹 2pcs IRF540N N-Channel Power MOSFET – TO-220 Package

This pack contains two IRF540N N-channel power MOSFETs, designed for high-efficiency power switching applications. Featuring extremely low on-resistance and high current handling capability, these HEXFET® power MOSFETs are ideal for DC-DC converters, motor drivers, power supplies, and battery management systems.

✅ Specifications:

• Model: IRF540N (International Rectifier / Infineon)

• Type: N-Channel Enhancement Mode MOSFET

• Package: TO-220 (through-hole, with metal tab)

• Drain-Source Voltage (VDS): 100V

• Continuous Drain Current (ID): 33A (@ 25°C)

• Pulsed Drain Current (IDM): 110A

• On-Resistance (RDS(on)): 44 mΩ (max @ VGS = 10V)

• Gate Threshold Voltage (VGS(th)): 2V – 4V

• Gate Charge (Qg): 35 nC (typical)

• Power Dissipation (PD): 94W (@ 25°C case temperature)

• Operating Temperature: -55°C to +175°C

• Quantity: 2 Pieces

⚠️ Important Note: For operation near maximum current or power dissipation, a proper heatsink is required. Without adequate cooling, the MOSFET may overheat and fail.

📦 Applications:
✔️ High-efficiency DC-DC converters
✔️ DC motor drivers and speed controllers
✔️ Brushless DC (BLDC) motor drives
✔️ Switching power supplies (SMPS)
✔️ Battery protection and management systems (BMS)
✔️ Load switches and power distribution
✔️ Inverter and UPS circuits
✔️ Automotive and industrial power control
✔️ Arduino and microcontroller switching (with proper gate drive)