Type Designator: HY3208

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 226 W

Maximum Drain-Source Voltage |Vds|: 80 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 120 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 70 nC

Rise Time (tr): 35 nS

Drain-Source Capacitance (Cd): 443 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0085 Ohm

Package: TO3PS