The 2N7000 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed current up to 2A. It is also suitable for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications.
Voltage controlled small signal switch
Rugged and reliable

Small signal N-Channel MOSFET
Drain-Source Voltage (VDS) is 60V
Continuous Drain Current (ID) is 200mA
Pulsed Drain Current (ID-peak) is 500mA
Gate threshold voltage (VGS-th) is 3V
Gate-Source Voltage is (VGS) is ±20V
Turn ON and Turn off time is 10ns each.
Available in To-92 Package