1N5822 Diode Features
Guardring for overvoltage protection
Very small conduction losses
Extremely fast switching
Low forward voltage drop
High forward surge capability
High frequency operation
Solder dip 275 °C max. 10 s, per JESD 22-B106
1N5822 Specifications
IF(AV) 3.0 A
VRRM 20 V, 30 V, 40 V
IFSM 80 A
VF 0.475 V, 0.500 V, 0.525 V
TJ max. 125 °C
Package DO-201AD
Brief about 1N5822
Schottky diodes have very low forward drop voltage VF which makes them ideal for fast switching applications at lower current ratings. 1N5822 have forward voltage drop of minimum 0.525 V that is it requires 0.525 V to conduct in forward biased direction. The 1N5822 has maximum average forward rectified current IF(AV) of 3A. The maximum repetitive peak reverse voltage VRRM for 1N5822 is 40V.
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